Using growth kinetics for nanoengineering of Si-Ge surfaces
Váldodahkkit: | Goldfarb, I, Briggs, G |
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Materiálatiipa: | Conference item |
Almmustuhtton: |
1998
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Geahča maid
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Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
Dahkki: Goldfarb, I, et al.
Almmustuhtton: (1999) -
Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
Dahkki: Owen, J, et al.
Almmustuhtton: (1997) -
Competing growth mechanisms of Ge/Si(001) coherent clusters
Dahkki: Goldfarb, I, et al.
Almmustuhtton: (1997) -
Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
Dahkki: Goldfarb, I, et al.
Almmustuhtton: (1997) -
Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
Dahkki: Goldfarb, I, et al.
Almmustuhtton: (1997)