Using growth kinetics for nanoengineering of Si-Ge surfaces
Huvudupphovsmän: | Goldfarb, I, Briggs, G |
---|---|
Materialtyp: | Conference item |
Publicerad: |
1998
|
Liknande verk
Liknande verk
-
Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
av: Goldfarb, I, et al.
Publicerad: (1999) -
Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
av: Owen, J, et al.
Publicerad: (1997) -
Competing growth mechanisms of Ge/Si(001) coherent clusters
av: Goldfarb, I, et al.
Publicerad: (1997) -
Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
av: Goldfarb, I, et al.
Publicerad: (1997) -
Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
av: Goldfarb, I, et al.
Publicerad: (1997)