Using growth kinetics for nanoengineering of Si-Ge surfaces

Những quyển sách tương tự

• Comparative STM and RHEED studies of Ge/Si(001) and Si/Ge/Si(001) surfaces
  Bằng: Goldfarb, I, et al.
  Được phát hành: (1999)
• Elevated-temperature STM study of Ge and Si growth on Si(001) from GeH4 and Si2H6
  Bằng: Owen, J, et al.
  Được phát hành: (1997)
• Competing growth mechanisms of Ge/Si(001) coherent clusters
  Bằng: Goldfarb, I, et al.
  Được phát hành: (1997)
• Nucleation, growth and size distributions of Ge islands on Si(001): in-situ STM studies
  Bằng: Goldfarb, I, et al.
  Được phát hành: (1997)
• Gas-source growth of group IV semiconductors: III. Nucleation and growth of Ge/Si(001)
  Bằng: Goldfarb, I, et al.
  Được phát hành: (1997)