Dependence of surface facet period on the diameter of nanowires.
Axial heterostructured silicon nanowires with varying n- and p-doping were synthesized using a vapor-liquid-solid approach. The nanowire sidewalls exhibit periodic nanofaceting in the silicon deposited directly on the sidewalls when diborane dopant gas is introduced during growth. For such nanofacet...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
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2010
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| _version_ | 1797087987904806912 |
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| author | Li, F Nellist, P Lang, C Cockayne, D |
| author_facet | Li, F Nellist, P Lang, C Cockayne, D |
| author_sort | Li, F |
| collection | OXFORD |
| description | Axial heterostructured silicon nanowires with varying n- and p-doping were synthesized using a vapor-liquid-solid approach. The nanowire sidewalls exhibit periodic nanofaceting in the silicon deposited directly on the sidewalls when diborane dopant gas is introduced during growth. For such nanofaceting, a model predicting the distance between facets (the facet period) is developed. For a nanowire structure, an extra energy cost term arising from the formation of apexes between facets is considered, and the facet size is predicted to decrease as the wire diameter increases. It is found that the model fits the experimental data well, and the fitted parameters in the model lie within the ranges of their expected values. |
| first_indexed | 2024-03-07T02:43:26Z |
| format | Journal article |
| id | oxford-uuid:ab3a9caf-5a34-4f68-ba46-9f355cc47179 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T02:43:26Z |
| publishDate | 2010 |
| record_format | dspace |
| spelling | oxford-uuid:ab3a9caf-5a34-4f68-ba46-9f355cc471792022-03-27T03:20:37ZDependence of surface facet period on the diameter of nanowires.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:ab3a9caf-5a34-4f68-ba46-9f355cc47179EnglishSymplectic Elements at Oxford2010Li, FNellist, PLang, CCockayne, DAxial heterostructured silicon nanowires with varying n- and p-doping were synthesized using a vapor-liquid-solid approach. The nanowire sidewalls exhibit periodic nanofaceting in the silicon deposited directly on the sidewalls when diborane dopant gas is introduced during growth. For such nanofaceting, a model predicting the distance between facets (the facet period) is developed. For a nanowire structure, an extra energy cost term arising from the formation of apexes between facets is considered, and the facet size is predicted to decrease as the wire diameter increases. It is found that the model fits the experimental data well, and the fitted parameters in the model lie within the ranges of their expected values. |
| spellingShingle | Li, F Nellist, P Lang, C Cockayne, D Dependence of surface facet period on the diameter of nanowires. |
| title | Dependence of surface facet period on the diameter of nanowires. |
| title_full | Dependence of surface facet period on the diameter of nanowires. |
| title_fullStr | Dependence of surface facet period on the diameter of nanowires. |
| title_full_unstemmed | Dependence of surface facet period on the diameter of nanowires. |
| title_short | Dependence of surface facet period on the diameter of nanowires. |
| title_sort | dependence of surface facet period on the diameter of nanowires |
| work_keys_str_mv | AT lif dependenceofsurfacefacetperiodonthediameterofnanowires AT nellistp dependenceofsurfacefacetperiodonthediameterofnanowires AT langc dependenceofsurfacefacetperiodonthediameterofnanowires AT cockayned dependenceofsurfacefacetperiodonthediameterofnanowires |