A novel source of atomic hydrogen for passivation of defects in silicon

Origin files created from eCV and lifetime tester outputs. The files were created using originpro software (standard data graphing application), and require originpro or similar to open.

Bibliographic Details
Main Author: Hamer, P
Format: Dataset
Published: University of Oxford 2017
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author Hamer, P
author_facet Hamer, P
author_sort Hamer, P
collection OXFORD
description Origin files created from eCV and lifetime tester outputs. The files were created using originpro software (standard data graphing application), and require originpro or similar to open.
first_indexed 2024-03-07T02:48:18Z
format Dataset
id oxford-uuid:acc85b8b-5196-483a-bcae-56c1b39ae59b
institution University of Oxford
last_indexed 2024-03-07T02:48:18Z
publishDate 2017
publisher University of Oxford
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spelling oxford-uuid:acc85b8b-5196-483a-bcae-56c1b39ae59b2022-03-27T03:31:17ZA novel source of atomic hydrogen for passivation of defects in siliconDatasethttp://purl.org/coar/resource_type/c_ddb1uuid:acc85b8b-5196-483a-bcae-56c1b39ae59bORA DepositUniversity of Oxford2017Hamer, POrigin files created from eCV and lifetime tester outputs. The files were created using originpro software (standard data graphing application), and require originpro or similar to open.
spellingShingle Hamer, P
A novel source of atomic hydrogen for passivation of defects in silicon
title A novel source of atomic hydrogen for passivation of defects in silicon
title_full A novel source of atomic hydrogen for passivation of defects in silicon
title_fullStr A novel source of atomic hydrogen for passivation of defects in silicon
title_full_unstemmed A novel source of atomic hydrogen for passivation of defects in silicon
title_short A novel source of atomic hydrogen for passivation of defects in silicon
title_sort novel source of atomic hydrogen for passivation of defects in silicon
work_keys_str_mv AT hamerp anovelsourceofatomichydrogenforpassivationofdefectsinsilicon
AT hamerp novelsourceofatomichydrogenforpassivationofdefectsinsilicon