Influence of point defects on the near edge structure of hexagonal boron nitride
Hexagonal boron nitride (hBN) is a wide-band-gap semiconductor with applications including gate insulation layers in graphene transistors, far-ultraviolet light emitting devices and as hydrogen storage media. Due to its complex microstructure, defects in hBN are challenging to identify. Here, we com...
| Main Authors: | , , , , |
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| 格式: | Journal article |
| 出版: |
American Physical Society
2017
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