Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures

We have studied the picosecond time dependence of luminescence from a two-dimensional electron system following absorption of an ultrashort light pulse. From our measurements we determine the temporal evolution of the carrier temperature, finding that the cooling of hot carriers is suppressed by a f...

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Հիմնական հեղինակներ: Ryan, J, Taylor, R, Turberfield, A, Maciel, A, Worlock, J, Gossard, A, Wiegmann, W
Ձևաչափ: Journal article
Լեզու:English
Հրապարակվել է: 1984
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author Ryan, J
Taylor, R
Turberfield, A
Maciel, A
Worlock, J
Gossard, A
Wiegmann, W
author_facet Ryan, J
Taylor, R
Turberfield, A
Maciel, A
Worlock, J
Gossard, A
Wiegmann, W
author_sort Ryan, J
collection OXFORD
description We have studied the picosecond time dependence of luminescence from a two-dimensional electron system following absorption of an ultrashort light pulse. From our measurements we determine the temporal evolution of the carrier temperature, finding that the cooling of hot carriers is suppressed by a factor 60 below that predicted on a three-dimensional nondegenerate-electron model. Additionally, we determine the electron-hole radiative life-time and invoke a hole trap to explain shortened luminescence lifetimes at low carrier densities. © 1984 The American Physical Society.
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spelling oxford-uuid:ade1a8f7-c426-463e-a65d-cf50fc927e372022-03-27T03:38:52ZTime-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructuresJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:ade1a8f7-c426-463e-a65d-cf50fc927e37EnglishSymplectic Elements at Oxford1984Ryan, JTaylor, RTurberfield, AMaciel, AWorlock, JGossard, AWiegmann, WWe have studied the picosecond time dependence of luminescence from a two-dimensional electron system following absorption of an ultrashort light pulse. From our measurements we determine the temporal evolution of the carrier temperature, finding that the cooling of hot carriers is suppressed by a factor 60 below that predicted on a three-dimensional nondegenerate-electron model. Additionally, we determine the electron-hole radiative life-time and invoke a hole trap to explain shortened luminescence lifetimes at low carrier densities. © 1984 The American Physical Society.
spellingShingle Ryan, J
Taylor, R
Turberfield, A
Maciel, A
Worlock, J
Gossard, A
Wiegmann, W
Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
title Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
title_full Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
title_fullStr Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
title_full_unstemmed Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
title_short Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
title_sort time resolved photoluminescence of two dimensional hot carriers in gaas algaas heterostructures
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AT worlockj timeresolvedphotoluminescenceoftwodimensionalhotcarriersingaasalgaasheterostructures
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