Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
We have studied the picosecond time dependence of luminescence from a two-dimensional electron system following absorption of an ultrashort light pulse. From our measurements we determine the temporal evolution of the carrier temperature, finding that the cooling of hot carriers is suppressed by a f...
Հիմնական հեղինակներ: | , , , , , , |
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Ձևաչափ: | Journal article |
Լեզու: | English |
Հրապարակվել է: |
1984
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_version_ | 1826290925571145728 |
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author | Ryan, J Taylor, R Turberfield, A Maciel, A Worlock, J Gossard, A Wiegmann, W |
author_facet | Ryan, J Taylor, R Turberfield, A Maciel, A Worlock, J Gossard, A Wiegmann, W |
author_sort | Ryan, J |
collection | OXFORD |
description | We have studied the picosecond time dependence of luminescence from a two-dimensional electron system following absorption of an ultrashort light pulse. From our measurements we determine the temporal evolution of the carrier temperature, finding that the cooling of hot carriers is suppressed by a factor 60 below that predicted on a three-dimensional nondegenerate-electron model. Additionally, we determine the electron-hole radiative life-time and invoke a hole trap to explain shortened luminescence lifetimes at low carrier densities. © 1984 The American Physical Society. |
first_indexed | 2024-03-07T02:51:39Z |
format | Journal article |
id | oxford-uuid:ade1a8f7-c426-463e-a65d-cf50fc927e37 |
institution | University of Oxford |
language | English |
last_indexed | 2024-03-07T02:51:39Z |
publishDate | 1984 |
record_format | dspace |
spelling | oxford-uuid:ade1a8f7-c426-463e-a65d-cf50fc927e372022-03-27T03:38:52ZTime-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructuresJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:ade1a8f7-c426-463e-a65d-cf50fc927e37EnglishSymplectic Elements at Oxford1984Ryan, JTaylor, RTurberfield, AMaciel, AWorlock, JGossard, AWiegmann, WWe have studied the picosecond time dependence of luminescence from a two-dimensional electron system following absorption of an ultrashort light pulse. From our measurements we determine the temporal evolution of the carrier temperature, finding that the cooling of hot carriers is suppressed by a factor 60 below that predicted on a three-dimensional nondegenerate-electron model. Additionally, we determine the electron-hole radiative life-time and invoke a hole trap to explain shortened luminescence lifetimes at low carrier densities. © 1984 The American Physical Society. |
spellingShingle | Ryan, J Taylor, R Turberfield, A Maciel, A Worlock, J Gossard, A Wiegmann, W Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures |
title | Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures |
title_full | Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures |
title_fullStr | Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures |
title_full_unstemmed | Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures |
title_short | Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures |
title_sort | time resolved photoluminescence of two dimensional hot carriers in gaas algaas heterostructures |
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