Performance of ZnSe-based scintillators at low temperatures
Applications that utilize scintillation detectors at low temperatures are growing in number. Many of these require materials with high light yield and a fast response. Here we report on the low-temperature characterisation of ZnSe doped with Al or Te, respectively. The X-ray luminescence and decay c...
| Príomhchruthaitheoirí: | , , , , , |
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| Formáid: | Journal article |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
Elsevier
2021
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| Achoimre: | Applications that utilize scintillation detectors at low temperatures are growing in number. Many of these require materials with high light yield and a fast response. Here we report on the low-temperature characterisation of ZnSe doped with Al or Te, respectively. The X-ray luminescence and decay curves were measured over the 77–295 K temperature range, and alpha particle excitation was used to examine scintillation light output and decay kinetics over the range 9–295 K. A significant improvement of the scintillation characteristics was observed at cooling below 100 K. The scintillation light yield of the crystals increases by a factor about two, and the decay time constant decreases by almost an order of magnitude to 0.3–0.4 μs. These improvements enhance the potential of ZnSe-based crystals for application in cryogenic scintillation detectors of ionising radiation. |
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