Stable field effect surface passivation of n-type Cz silicon
Surface recombination of carriers in solar cells can cause a significant reduction in their efficiency and is most commonly minimized by the deposition of surface dielectric layers which simultaneously perform two functions; efficient passivation of surface recombination and the provision of an effe...
Հիմնական հեղինակներ: | Bonilla, R, Wilshaw, P |
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Ձևաչափ: | Conference item |
Հրապարակվել է: |
2013
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Նմանատիպ նյութեր
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Data for "Lowest surface recombination in n-type oxidised crystalline silicon by means of extrinsic field effect passivation"
: Bonilla, R, և այլն
Հրապարակվել է: (2016) -
A technique for field effect surface passivation for silicon solar cells
: Bonilla, R, և այլն
Հրապարակվել է: (2014) -
Controlled field effect surface passivation of crystalline n-type silicon and its application to back-contact silicon solar cells
: Bonilla, R, և այլն
Հրապարակվել է: (2014) -
Data for Corona field effect surface passivation of n-type IBC cells
: Bonilla, R, և այլն
Հրապարակվել է: (2016) -
A technique for field effect surface passivation for silicon solar cells
: Bonilla Osorio, RS, և այլն
Հրապարակվել է: (2014)