Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
語言
全文檢索
題名
作者
主題
索引號
ISBN/ISSN
標簽
檢索
高級檢索
SURFACE-REACTION MECHANISMS IN...
引用
發送短信
推薦此
打印
導出紀錄
導出到 RefWorks
導出到 EndNoteWeb
導出到 EndNote
Permanent link
SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY
書目詳細資料
Main Authors:
Foord, J
,
Singh, N
,
Wee, A
,
French, C
,
Fitzgerald, E
格式:
Conference item
出版:
1991
持有資料
實物特徵
相似書籍
職員瀏覽
相似書籍
REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
由: Foord, J, et al.
出版: (1993)
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
由: Davies, G, et al.
出版: (1993)
SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
由: Davies, G, et al.
出版: (1991)
REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
由: Foord, J, et al.
出版: (1993)
SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
由: Davies, G, et al.
出版: (1994)