SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY
Autors principals: | Foord, J, Singh, N, Wee, A, French, C, Fitzgerald, E |
---|---|
Format: | Conference item |
Publicat: |
1991
|
Ítems similars
-
REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
per: Foord, J, et al.
Publicat: (1993) -
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
per: Davies, G, et al.
Publicat: (1993) -
SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
per: Davies, G, et al.
Publicat: (1991) -
REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
per: Foord, J, et al.
Publicat: (1993) -
SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
per: Davies, G, et al.
Publicat: (1994)