SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY

SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY

Manylion Llyfryddiaeth
Prif Awduron:	Foord, J, Singh, N, Wee, A, French, C, Fitzgerald, E
Fformat:	Conference item
Cyhoeddwyd:	1991

Eitemau Tebyg

REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Foord, J, et al.
Cyhoeddwyd: (1993)

SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Davies, G, et al.
Cyhoeddwyd: (1993)

SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
gan: Davies, G, et al.
Cyhoeddwyd: (1991)

REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Foord, J, et al.
Cyhoeddwyd: (1993)

SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
gan: Davies, G, et al.
Cyhoeddwyd: (1994)

DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE
gan: Kingsley, C, et al.
Cyhoeddwyd: (1995)

SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Davies, G, et al.
Cyhoeddwyd: (1992)

SURFACE CHEMICAL PROCESSES IN METAL ORGANIC MOLECULAR-BEAM EPITAXY - GA DEPOSITION FROM TRIETHYLGALLIUM ON GAAS(100)
gan: Murrell, A, et al.
Cyhoeddwyd: (1990)

An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques
gan: Foord, J, et al.
Cyhoeddwyd: (1996)

Growth and mechanistic studies of diamond formation by chemical beam epitaxy using methyl and acetylene precursors
gan: Foord, J, et al.
Cyhoeddwyd: (1996)

CHEMICAL BEAM EPITAXY AND RELATED GROWTH TECHNIQUES 1991 - PROCEEDINGS OF THE 3RD INTERNATIONAL-CONFERENCE ON CHEMICAL BEAM EPITAXY AND RELATED GROWTH TECHNIQUES OXFORD, UK, 1-5 SEPTEMBER 1991 - PREFACE
gan: Davies, G, et al.
Cyhoeddwyd: (1992)

SURFACE CHEMICAL STUDIES OF THE INFLUENCE OF IN AND AL ON THE DECOMPOSITION OF TEG ON GAAS(100)
gan: Fitzgerald, E, et al.
Cyhoeddwyd: (1992)

Reactivity patterns of stibine and trisdimethylaminoantimony precursors for chemical beam epitaxial growth and etching
gan: Foord, J, et al.
Cyhoeddwyd: (1998)

Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Surface spectroscopic and molecular beam studies of the reactions of trimethylaluminium on Si(100)
gan: Wee, A, et al.
Cyhoeddwyd: (1989)

SURFACE SPECTROSCOPIC AND MOLECULAR-BEAM STUDIES OF THE REACTIONS OF TRIMETHYLALUMINUM ON SI(100)
gan: Wee, A, et al.
Cyhoeddwyd: (1989)

Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

COMPARATIVE-STUDIES OF THE SURFACE REACTIVITY OF TRIETHYLGALLIUM ON SEMICONDUCTOR AND DIELECTRIC SURFACES
gan: Fitzgerald, E, et al.
Cyhoeddwyd: (1991)

SOME COMPARISONS OF CHEMICAL BEAM EPITAXY INGAAS/INP GROWTH USING TRIETHYLGALLIUM, TRIISOPROPYLGALLIUM AND TRIISOBUTYLGALLIUM SOURCES
gan: Davies, G, et al.
Cyhoeddwyd: (1994)

INVESTIGATIONS OF THE THERMAL-REACTIONS OF CHLORINE ON THE GAAS(100) SURFACE
gan: French, C, et al.
Cyhoeddwyd: (1991)

APPLICATIONS OF MBMS AND SURFACE SPECTROSCOPIC TECHNIQUES IN THE STUDY OF REACTION-MECHANISMS IN CBE - INVESTIGATIONS OF THE REACTIVITY OF TRITERTIARYBUTYLGALLIUM AND TRIISOBUTYLGALLIUM AS ALTERNATIVE PRECURSORS FOR EPILAYER GROWTH
gan: Foord, J, et al.
Cyhoeddwyd: (1992)

REACTION-KINETICS FOR THE CBE GROWTH OF GAAS FROM TRIETHYLGALLIUM - COMPUTER MODELING STUDIES INCORPORATING RECENT SURFACE SPECTROSCOPIC DATA
gan: French, C, et al.
Cyhoeddwyd: (1992)

CHEMISORPTION AND EPITAXIAL-GROWTH - STRUCTURAL AND KINETIC-STUDIES OF HALOGEN INTERACTIONS WITH VANADIUM AND CHROMIUM SURFACES
gan: Reed, A, et al.
Cyhoeddwyd: (1983)

INVESTIGATION OF THE GROWTH OF GALLIUM-ARSENIDE THIN-FILMS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING GALLANE-QUINUCLIDINE ADDUCT
gan: Foord, J, et al.
Cyhoeddwyd: (1993)

Reactions of xenon difluoride and atomic hydrogen at chemical vapour deposited diamond surfaces
gan: Foord, J, et al.
Cyhoeddwyd: (2001)

Chemical functionalization of diamond surfaces by reaction with diaryl carbenes.
gan: Wang, H, et al.
Cyhoeddwyd: (2008)

CHEMICAL PRECURSORS FOR GAAS ETCHING WITH LOW-ENERGY ION-BEAMS - CHLORINE ADSORPTION ON GAAS(100)
gan: Jackman, R, et al.
Cyhoeddwyd: (1991)

Silicon molecular beam epitaxy
gan: Leong, Weng Yee
Cyhoeddwyd: (1985)

Molecular beam epitaxy and heterostructures/
gan: Chang, Leroy L., et al.
Cyhoeddwyd: (1985)

Growth of microscale In2O3 islands on Y-stabilized zirconia(100) by molecular beam epitaxy
gan: Bourlange, A, et al.
Cyhoeddwyd: (2008)

Epitaxial growth of bronze phase titanium dioxide by molecular beam epitaxy
gan: W. Guo, et al.
Cyhoeddwyd: (2019-03-01)

SURFACE DECOMPOSITION MECHANISM OF THE NOVEL PRECURSOR BISTRIMETHYLAMINE ALUMINUM-HYDRIDE ON GAAS(100)
gan: Wee, A, et al.
Cyhoeddwyd: (1990)

Molecular beam epitaxy of antiperovskite oxides
gan: H. Nakamura, et al.
Cyhoeddwyd: (2022-06-01)

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
gan: Yu Ing-Song, et al.
Cyhoeddwyd: (2011-01-01)

Interfacial Diffusion during Growth of SnO2(110) on TiO2(110) by Oxygen Plasma Assisted Molecular Beam Epitaxy
gan: Palgrave, R, et al.
Cyhoeddwyd: (2009)

Superconductivity in hyperdoped Ge by molecular beam epitaxy
gan: Patrick J. Strohbeen, et al.
Cyhoeddwyd: (2023-08-01)

Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy
gan: Shin, D, et al.
Cyhoeddwyd: (2012)