SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY

SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY

ग्रंथसूची विवरण
मुख्य लेखकों:	Foord, J, Singh, N, Wee, A, French, C, Fitzgerald, E
स्वरूप:	Conference item
प्रकाशित:	1991

समान संसाधन

REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
द्वारा: Foord, J, और अन्य
प्रकाशित: (1993)

SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
द्वारा: Davies, G, और अन्य
प्रकाशित: (1993)

SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
द्वारा: Davies, G, और अन्य
प्रकाशित: (1991)

REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
द्वारा: Foord, J, और अन्य
प्रकाशित: (1993)

SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
द्वारा: Davies, G, और अन्य
प्रकाशित: (1994)

DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE
द्वारा: Kingsley, C, और अन्य
प्रकाशित: (1995)

SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
द्वारा: Davies, G, और अन्य
प्रकाशित: (1992)

SURFACE CHEMICAL PROCESSES IN METAL ORGANIC MOLECULAR-BEAM EPITAXY - GA DEPOSITION FROM TRIETHYLGALLIUM ON GAAS(100)
द्वारा: Murrell, A, और अन्य
प्रकाशित: (1990)

An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques
द्वारा: Foord, J, और अन्य
प्रकाशित: (1996)

Growth and mechanistic studies of diamond formation by chemical beam epitaxy using methyl and acetylene precursors
द्वारा: Foord, J, और अन्य
प्रकाशित: (1996)

CHEMICAL BEAM EPITAXY AND RELATED GROWTH TECHNIQUES 1991 - PROCEEDINGS OF THE 3RD INTERNATIONAL-CONFERENCE ON CHEMICAL BEAM EPITAXY AND RELATED GROWTH TECHNIQUES OXFORD, UK, 1-5 SEPTEMBER 1991 - PREFACE
द्वारा: Davies, G, और अन्य
प्रकाशित: (1992)

SURFACE CHEMICAL STUDIES OF THE INFLUENCE OF IN AND AL ON THE DECOMPOSITION OF TEG ON GAAS(100)
द्वारा: Fitzgerald, E, और अन्य
प्रकाशित: (1992)

Reactivity patterns of stibine and trisdimethylaminoantimony precursors for chemical beam epitaxial growth and etching
द्वारा: Foord, J, और अन्य
प्रकाशित: (1998)

Chemical Beam Epitaxy of Compound Semiconductors
द्वारा: Kolodziejski, Leslie A., और अन्य
प्रकाशित: (2010)

Surface spectroscopic and molecular beam studies of the reactions of trimethylaluminium on Si(100)
द्वारा: Wee, A, और अन्य
प्रकाशित: (1989)

SURFACE SPECTROSCOPIC AND MOLECULAR-BEAM STUDIES OF THE REACTIONS OF TRIMETHYLALUMINUM ON SI(100)
द्वारा: Wee, A, और अन्य
प्रकाशित: (1989)

Chemical Beam Epitaxy of Compound Semiconductors
द्वारा: Kolodziejski, Leslie A., और अन्य
प्रकाशित: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
द्वारा: Kolodziejski, Leslie A., और अन्य
प्रकाशित: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
द्वारा: Kolodziejski, Leslie A., और अन्य
प्रकाशित: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
द्वारा: Kolodziejski, Leslie A., और अन्य
प्रकाशित: (2010)

COMPARATIVE-STUDIES OF THE SURFACE REACTIVITY OF TRIETHYLGALLIUM ON SEMICONDUCTOR AND DIELECTRIC SURFACES
द्वारा: Fitzgerald, E, और अन्य
प्रकाशित: (1991)

SOME COMPARISONS OF CHEMICAL BEAM EPITAXY INGAAS/INP GROWTH USING TRIETHYLGALLIUM, TRIISOPROPYLGALLIUM AND TRIISOBUTYLGALLIUM SOURCES
द्वारा: Davies, G, और अन्य
प्रकाशित: (1994)

INVESTIGATIONS OF THE THERMAL-REACTIONS OF CHLORINE ON THE GAAS(100) SURFACE
द्वारा: French, C, और अन्य
प्रकाशित: (1991)

APPLICATIONS OF MBMS AND SURFACE SPECTROSCOPIC TECHNIQUES IN THE STUDY OF REACTION-MECHANISMS IN CBE - INVESTIGATIONS OF THE REACTIVITY OF TRITERTIARYBUTYLGALLIUM AND TRIISOBUTYLGALLIUM AS ALTERNATIVE PRECURSORS FOR EPILAYER GROWTH
द्वारा: Foord, J, और अन्य
प्रकाशित: (1992)

REACTION-KINETICS FOR THE CBE GROWTH OF GAAS FROM TRIETHYLGALLIUM - COMPUTER MODELING STUDIES INCORPORATING RECENT SURFACE SPECTROSCOPIC DATA
द्वारा: French, C, और अन्य
प्रकाशित: (1992)

CHEMISORPTION AND EPITAXIAL-GROWTH - STRUCTURAL AND KINETIC-STUDIES OF HALOGEN INTERACTIONS WITH VANADIUM AND CHROMIUM SURFACES
द्वारा: Reed, A, और अन्य
प्रकाशित: (1983)

INVESTIGATION OF THE GROWTH OF GALLIUM-ARSENIDE THIN-FILMS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING GALLANE-QUINUCLIDINE ADDUCT
द्वारा: Foord, J, और अन्य
प्रकाशित: (1993)

Reactions of xenon difluoride and atomic hydrogen at chemical vapour deposited diamond surfaces
द्वारा: Foord, J, और अन्य
प्रकाशित: (2001)

Chemical functionalization of diamond surfaces by reaction with diaryl carbenes.
द्वारा: Wang, H, और अन्य
प्रकाशित: (2008)

CHEMICAL PRECURSORS FOR GAAS ETCHING WITH LOW-ENERGY ION-BEAMS - CHLORINE ADSORPTION ON GAAS(100)
द्वारा: Jackman, R, और अन्य
प्रकाशित: (1991)

Silicon molecular beam epitaxy
द्वारा: Leong, Weng Yee
प्रकाशित: (1985)

Molecular beam epitaxy and heterostructures/
द्वारा: Chang, Leroy L., और अन्य
प्रकाशित: (1985)

Growth of microscale In2O3 islands on Y-stabilized zirconia(100) by molecular beam epitaxy
द्वारा: Bourlange, A, और अन्य
प्रकाशित: (2008)

Epitaxial growth of bronze phase titanium dioxide by molecular beam epitaxy
द्वारा: W. Guo, और अन्य
प्रकाशित: (2019-03-01)

SURFACE DECOMPOSITION MECHANISM OF THE NOVEL PRECURSOR BISTRIMETHYLAMINE ALUMINUM-HYDRIDE ON GAAS(100)
द्वारा: Wee, A, और अन्य
प्रकाशित: (1990)

Molecular beam epitaxy of antiperovskite oxides
द्वारा: H. Nakamura, और अन्य
प्रकाशित: (2022-06-01)

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy
द्वारा: Yu Ing-Song, और अन्य
प्रकाशित: (2011-01-01)

Interfacial Diffusion during Growth of SnO2(110) on TiO2(110) by Oxygen Plasma Assisted Molecular Beam Epitaxy
द्वारा: Palgrave, R, और अन्य
प्रकाशित: (2009)

Superconductivity in hyperdoped Ge by molecular beam epitaxy
द्वारा: Patrick J. Strohbeen, और अन्य
प्रकाशित: (2023-08-01)

Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy
द्वारा: Shin, D, और अन्य
प्रकाशित: (2012)