SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY

SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY

Chi tiết về thư mục
Những tác giả chính:	Foord, J, Singh, N, Wee, A, French, C, Fitzgerald, E
Định dạng:	Conference item
Được phát hành:	1991

Những quyển sách tương tự

REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
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SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
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SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
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REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
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Được phát hành: (1993)

SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
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Được phát hành: (1994)

DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE
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Được phát hành: (1995)

SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
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Được phát hành: (1992)

SURFACE CHEMICAL PROCESSES IN METAL ORGANIC MOLECULAR-BEAM EPITAXY - GA DEPOSITION FROM TRIETHYLGALLIUM ON GAAS(100)
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An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques
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Được phát hành: (1996)

Growth and mechanistic studies of diamond formation by chemical beam epitaxy using methyl and acetylene precursors
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CHEMICAL BEAM EPITAXY AND RELATED GROWTH TECHNIQUES 1991 - PROCEEDINGS OF THE 3RD INTERNATIONAL-CONFERENCE ON CHEMICAL BEAM EPITAXY AND RELATED GROWTH TECHNIQUES OXFORD, UK, 1-5 SEPTEMBER 1991 - PREFACE
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SURFACE CHEMICAL STUDIES OF THE INFLUENCE OF IN AND AL ON THE DECOMPOSITION OF TEG ON GAAS(100)
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Reactivity patterns of stibine and trisdimethylaminoantimony precursors for chemical beam epitaxial growth and etching
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Chemical Beam Epitaxy of Compound Semiconductors
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Surface spectroscopic and molecular beam studies of the reactions of trimethylaluminium on Si(100)
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SURFACE SPECTROSCOPIC AND MOLECULAR-BEAM STUDIES OF THE REACTIONS OF TRIMETHYLALUMINUM ON SI(100)
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Chemical Beam Epitaxy of Compound Semiconductors
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Chemical Beam Epitaxy of Compound Semiconductors
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Được phát hành: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
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Chemical Beam Epitaxy of Compound Semiconductors
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COMPARATIVE-STUDIES OF THE SURFACE REACTIVITY OF TRIETHYLGALLIUM ON SEMICONDUCTOR AND DIELECTRIC SURFACES
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SOME COMPARISONS OF CHEMICAL BEAM EPITAXY INGAAS/INP GROWTH USING TRIETHYLGALLIUM, TRIISOPROPYLGALLIUM AND TRIISOBUTYLGALLIUM SOURCES
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INVESTIGATIONS OF THE THERMAL-REACTIONS OF CHLORINE ON THE GAAS(100) SURFACE
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APPLICATIONS OF MBMS AND SURFACE SPECTROSCOPIC TECHNIQUES IN THE STUDY OF REACTION-MECHANISMS IN CBE - INVESTIGATIONS OF THE REACTIVITY OF TRITERTIARYBUTYLGALLIUM AND TRIISOBUTYLGALLIUM AS ALTERNATIVE PRECURSORS FOR EPILAYER GROWTH
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REACTION-KINETICS FOR THE CBE GROWTH OF GAAS FROM TRIETHYLGALLIUM - COMPUTER MODELING STUDIES INCORPORATING RECENT SURFACE SPECTROSCOPIC DATA
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CHEMISORPTION AND EPITAXIAL-GROWTH - STRUCTURAL AND KINETIC-STUDIES OF HALOGEN INTERACTIONS WITH VANADIUM AND CHROMIUM SURFACES
Bằng: Reed, A, et al.
Được phát hành: (1983)

INVESTIGATION OF THE GROWTH OF GALLIUM-ARSENIDE THIN-FILMS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING GALLANE-QUINUCLIDINE ADDUCT
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Reactions of xenon difluoride and atomic hydrogen at chemical vapour deposited diamond surfaces
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Chemical functionalization of diamond surfaces by reaction with diaryl carbenes.
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CHEMICAL PRECURSORS FOR GAAS ETCHING WITH LOW-ENERGY ION-BEAMS - CHLORINE ADSORPTION ON GAAS(100)
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Silicon molecular beam epitaxy
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Molecular beam epitaxy and heterostructures/
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Growth of microscale In2O3 islands on Y-stabilized zirconia(100) by molecular beam epitaxy
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Epitaxial growth of bronze phase titanium dioxide by molecular beam epitaxy
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Electronic structure of CuCrO2 thin films grown on Al2O3(001) by oxygen plasma assisted molecular beam epitaxy
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