Pular para o conteúdo
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Idioma
Todos os campos
Título
Autor
Assunto
Número de Chamada
ISBN/ISSN
Tag
Buscar
Avançada
SURFACE-REACTION MECHANISMS IN...
Citar
Enviar por SMS
Enviar por e-mail
Imprimir
Exportar registro
Exportar para RefWorks
Exportar para EndNoteWeb
Exportar para EndNote
Link permanente
SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY
Detalhes bibliográficos
Principais autores:
Foord, J
,
Singh, N
,
Wee, A
,
French, C
,
Fitzgerald, E
Formato:
Conference item
Publicado em:
1991
Itens
Descrição
Registros relacionados
Registro fonte
Registros relacionados
REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
por: Foord, J, et al.
Publicado em: (1993)
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
por: Davies, G, et al.
Publicado em: (1993)
SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
por: Davies, G, et al.
Publicado em: (1991)
REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
por: Foord, J, et al.
Publicado em: (1993)
SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
por: Davies, G, et al.
Publicado em: (1994)