Dislocation imaging using ion beam induced charge
The recently developed ion beam induced charge technique has been used to image bands of misfit dislocations in a 4 μm thick epitaxial layer of Si 0.875Ge0.125 grown on a Si substrate. The smallest resolvable bandwidth is 0.8 μm under present conditions. The factors which presently limit this value,...
| Hlavní autoři: | , , , |
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| Médium: | Journal article |
| Jazyk: | English |
| Vydáno: |
1993
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| Shrnutí: | The recently developed ion beam induced charge technique has been used to image bands of misfit dislocations in a 4 μm thick epitaxial layer of Si 0.875Ge0.125 grown on a Si substrate. The smallest resolvable bandwidth is 0.8 μm under present conditions. The factors which presently limit this value, and methods for improving it are discussed. |
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