Impurity locking of dislocations in silicon
The behaviour of oxygen and nitrogen impurities in silicon has been investigated using a novel dislocation locking technique. The locking effect of oxygen in Czochralski silicon (Cz-Si) was investigated in the 350 to 850°C temperature range and was found to display five well-defined regimes as a fun...
| Main Authors: | , , , , |
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| 格式: | Journal article |
| 語言: | English |
| 出版: |
2004
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