Pressure dependence of the cyclotron resonance modes in high mobility two-dimensional hole systems in GaAs-(Ga,Al)As heterojunctions

We have performed the first cyclotron resonance studies of high mobility two-dimensional hole systems (2DHS) under pressure. Experiments were carried out using millimetre wave radiation on GaAs-(Ga, Al)As heterojunctions. Pressures were applied using a clamp cell specially designed for millimetre wa...

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Những tác giả chính: Verschoor, G, Schrama, J, Semeno, A, Kornilov, A, Klehe, A, Ardavan, A, Singleton, J, Goy, P, Chamberlain, J, Henini, M, Cheng, T
Định dạng: Conference item
Được phát hành: 1998