Graphene oxide films for field effect surface passivation of silicon for solar cells
In recent years it has been shown that graphene oxide (GO) can be used to passivate silicon surfaces resulting in increased photocurrents in metal-insulator-semiconductor (MIS) tunneling diodes, and in improved efficiencies in Schottky-barrier solar cells with either metal or graphene barriers, howe...
| Главные авторы: | , , , , , , |
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| Формат: | Journal article |
| Опубликовано: |
Elsevier
2018
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