Graphene oxide films for field effect surface passivation of silicon for solar cells
In recent years it has been shown that graphene oxide (GO) can be used to passivate silicon surfaces resulting in increased photocurrents in metal-insulator-semiconductor (MIS) tunneling diodes, and in improved efficiencies in Schottky-barrier solar cells with either metal or graphene barriers, howe...
المؤلفون الرئيسيون: | Vaqueiro-Contreras, M, Bartlam, C, Bonilla, R, Markevich, V, Halsall, M, Vijayaraghavan, A, Peaker, A |
---|---|
التنسيق: | Journal article |
منشور في: |
Elsevier
2018
|
مواد مشابهة
-
The surface passivation mechanism of graphene oxide for crystalline silicon
حسب: Vaqueiro-Contreras, M, وآخرون
منشور في: (2020) -
Electric field effect surface passivation for silicon solar cells
حسب: Bonilla, R, وآخرون
منشور في: (2014) -
A technique for field effect surface passivation for silicon solar cells
حسب: Bonilla, R, وآخرون
منشور في: (2014) -
A technique for field effect surface passivation for silicon solar cells
حسب: Bonilla Osorio, RS, وآخرون
منشور في: (2014) -
Controlled field effect surface passivation of crystalline n-type silicon and its application to back-contact silicon solar cells
حسب: Bonilla, R, وآخرون
منشور في: (2014)