Graphene oxide films for field effect surface passivation of silicon for solar cells

Graphene oxide films for field effect surface passivation of silicon for solar cells

In recent years it has been shown that graphene oxide (GO) can be used to passivate silicon surfaces resulting in increased photocurrents in metal-insulator-semiconductor (MIS) tunneling diodes, and in improved efficiencies in Schottky-barrier solar cells with either metal or graphene barriers, howe...

Bibliografiset tiedot
Päätekijät:	Vaqueiro-Contreras, M, Bartlam, C, Bonilla, R, Markevich, V, Halsall, M, Vijayaraghavan, A, Peaker, A
Aineistotyyppi:	Journal article
Julkaistu:	Elsevier 2018

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