ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
Electron channelling contrast imaging (ECCI) is a SEM based technique for imaging and characterising the Burgers vectors of dislocations in bulk samples. Thus, thin foil relaxation effects do not occur and specimen preparation is relatively straightforward. In this paper we present preliminary resul...
Hlavní autoři: | Czernuszka, J, Long, N, Hirsch, P |
---|---|
Médium: | Conference item |
Vydáno: |
Publ by Inst of Physics Publ Ltd
1991
|
Podobné jednotky
-
ANALYSIS OF DEFECTS IN BULK SEMICONDUCTORS USING ELECTRON CHANNELING CONTRAST IMAGING
Autor: Czernuszka, J, a další
Vydáno: (1991) -
ELECTRON CHANNELING CONTRAST IMAGING OF DEFECTS IN SEMICONDUCTORS
Autor: Wilkinson, A, a další
Vydáno: (1993) -
ELECTRON CHANNELING CONTRAST IMAGING (ECCI) OF DISLOCATIONS IN BULK SPECIMENS
Autor: Czernuszka, J, a další
Vydáno: (1991) -
ELECTRON CHANNELING CONTRAST IMAGING OF INTERFACIAL DEFECTS IN STRAINED SILICON-GERMANIUM LAYERS ON SILICON
Autor: Wilkinson, A, a další
Vydáno: (1993) -
Effects of surface relaxation on electron channelling contrast images of misfit dislocations
Autor: Wilkinson, A, a další
Vydáno: (1994)