Multiple scattering simulation of electron channelling contrast images of dislocations at interfaces
Quantum-mechanical multiple scattering theory of electron backscattering from crystalline materials is applied to simulate channelling images of dislocations situated near the surface of a crystal. A computational algorithm is developed which uses perturbation expansion of the solution of an inhomog...
المؤلفون الرئيسيون: | Dudarev, S, Czernuszka, J, Peng, L, Wilkinson, A, Whelan, M |
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التنسيق: | Conference item |
منشور في: |
1995
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مواد مشابهة
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Effects of surface relaxation on electron channelling contrast images of misfit dislocations
حسب: Wilkinson, A, وآخرون
منشور في: (1994) -
ELECTRON CHANNELING CONTRAST IMAGING (ECCI) OF DISLOCATIONS IN BULK SPECIMENS
حسب: Czernuszka, J, وآخرون
منشور في: (1991) -
Quantitative simulations of electron channelling patterns and electron backscattering from crystals
حسب: Dudarev, S, وآخرون
منشور في: (1994) -
ELECTRON CHANNELING CONTRAST IMAGING OF DEFECTS IN SEMICONDUCTORS
حسب: Wilkinson, A, وآخرون
منشور في: (1993) -
THE EFFECTS OF SURFACE STRESS-RELAXATION ON ELECTRON CHANNELING CONTRAST IMAGES OF DISLOCATIONS
حسب: Wilkinson, A, وآخرون
منشور في: (1995)