Multiple scattering simulation of electron channelling contrast images of dislocations at interfaces
Quantum-mechanical multiple scattering theory of electron backscattering from crystalline materials is applied to simulate channelling images of dislocations situated near the surface of a crystal. A computational algorithm is developed which uses perturbation expansion of the solution of an inhomog...
Autors principals: | , , , , |
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Format: | Conference item |
Publicat: |
1995
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