A 220 GHz finline mixer with ultra-wide instantaneous bandwidth
We describe the design and fabrication of a 220 GHz superconductor-insulator-superconductor (SIS) mixer with ultrawide IF bandwidth. The mixer is fabricated on a 100 µm thick quartz substrate, with planar circuit on-chip integration. The RF power is coupled to the tunnel junction via a unilateral fi...
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| Format: | Conference item |
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IEEE
2015
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| _version_ | 1826292775502479360 |
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| author | Tan, B Boussaha, F Chaumont, C Yassin, G |
| author_facet | Tan, B Boussaha, F Chaumont, C Yassin, G |
| author_sort | Tan, B |
| collection | OXFORD |
| description | We describe the design and fabrication of a 220 GHz superconductor-insulator-superconductor (SIS) mixer with ultrawide IF bandwidth. The mixer is fabricated on a 100 µm thick quartz substrate, with planar circuit on-chip integration. The RF power is coupled to the tunnel junction via a unilateral finline taper and a slotline-to-microstrip transition. We used a double-stub tuning network to tune out the junction’s parasitic capacitance at a broad RF bandwidth, and matched the output impedance of the mixer to the input impedance of the IF amplifier (50 Ω) from 4–18 GHz using a 6-stage IF impedance-transformer. We have fabricated these devices and have measured good DC current-voltage (IV) characteristic curves. The heterodyne mixing performance of these devices is currently being measured, and we expect to present the results in the forthcoming ISSTT conference in March. |
| first_indexed | 2024-03-07T03:19:54Z |
| format | Conference item |
| id | oxford-uuid:b712153d-56fa-4104-8024-f2a6fc34451f |
| institution | University of Oxford |
| last_indexed | 2024-03-07T03:19:54Z |
| publishDate | 2015 |
| publisher | IEEE |
| record_format | dspace |
| spelling | oxford-uuid:b712153d-56fa-4104-8024-f2a6fc34451f2022-03-27T04:45:49ZA 220 GHz finline mixer with ultra-wide instantaneous bandwidthConference itemhttp://purl.org/coar/resource_type/c_5794uuid:b712153d-56fa-4104-8024-f2a6fc34451fSymplectic Elements at OxfordIEEE2015Tan, BBoussaha, FChaumont, CYassin, GWe describe the design and fabrication of a 220 GHz superconductor-insulator-superconductor (SIS) mixer with ultrawide IF bandwidth. The mixer is fabricated on a 100 µm thick quartz substrate, with planar circuit on-chip integration. The RF power is coupled to the tunnel junction via a unilateral finline taper and a slotline-to-microstrip transition. We used a double-stub tuning network to tune out the junction’s parasitic capacitance at a broad RF bandwidth, and matched the output impedance of the mixer to the input impedance of the IF amplifier (50 Ω) from 4–18 GHz using a 6-stage IF impedance-transformer. We have fabricated these devices and have measured good DC current-voltage (IV) characteristic curves. The heterodyne mixing performance of these devices is currently being measured, and we expect to present the results in the forthcoming ISSTT conference in March. |
| spellingShingle | Tan, B Boussaha, F Chaumont, C Yassin, G A 220 GHz finline mixer with ultra-wide instantaneous bandwidth |
| title | A 220 GHz finline mixer with ultra-wide instantaneous bandwidth |
| title_full | A 220 GHz finline mixer with ultra-wide instantaneous bandwidth |
| title_fullStr | A 220 GHz finline mixer with ultra-wide instantaneous bandwidth |
| title_full_unstemmed | A 220 GHz finline mixer with ultra-wide instantaneous bandwidth |
| title_short | A 220 GHz finline mixer with ultra-wide instantaneous bandwidth |
| title_sort | 220 ghz finline mixer with ultra wide instantaneous bandwidth |
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