THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
The EBIC mode of the SEM has been used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means...
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| Format: | Journal article |
| Language: | English |
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1983
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| _version_ | 1826292869510463488 |
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| author | Ourmazd, A Wilshaw, P Booker, G |
| author_facet | Ourmazd, A Wilshaw, P Booker, G |
| author_sort | Ourmazd, A |
| collection | OXFORD |
| description | The EBIC mode of the SEM has been used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means for the determination of defect energy levels at high spatial resolution is proposed. First results of a project designed to yield information on the energy levels associated with dislocations in Si are described. The first direct electrical observation of the individual Shockley partials of dissociated dislocations is also reported. © 1983. |
| first_indexed | 2024-03-07T03:21:20Z |
| format | Journal article |
| id | oxford-uuid:b78bb484-cb9f-4619-9b72-668da18d028e |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T03:21:20Z |
| publishDate | 1983 |
| record_format | dspace |
| spelling | oxford-uuid:b78bb484-cb9f-4619-9b72-668da18d028e2022-03-27T04:49:19ZTHE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICONJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:b78bb484-cb9f-4619-9b72-668da18d028eEnglishSymplectic Elements at Oxford1983Ourmazd, AWilshaw, PBooker, GThe EBIC mode of the SEM has been used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means for the determination of defect energy levels at high spatial resolution is proposed. First results of a project designed to yield information on the energy levels associated with dislocations in Si are described. The first direct electrical observation of the individual Shockley partials of dissociated dislocations is also reported. © 1983. |
| spellingShingle | Ourmazd, A Wilshaw, P Booker, G THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON |
| title | THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON |
| title_full | THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON |
| title_fullStr | THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON |
| title_full_unstemmed | THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON |
| title_short | THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON |
| title_sort | electrical behavior of individual dislocations shockley partials and stacking fault ribbons in silicon |
| work_keys_str_mv | AT ourmazda theelectricalbehaviorofindividualdislocationsshockleypartialsandstackingfaultribbonsinsilicon AT wilshawp theelectricalbehaviorofindividualdislocationsshockleypartialsandstackingfaultribbonsinsilicon AT bookerg theelectricalbehaviorofindividualdislocationsshockleypartialsandstackingfaultribbonsinsilicon AT ourmazda electricalbehaviorofindividualdislocationsshockleypartialsandstackingfaultribbonsinsilicon AT wilshawp electricalbehaviorofindividualdislocationsshockleypartialsandstackingfaultribbonsinsilicon AT bookerg electricalbehaviorofindividualdislocationsshockleypartialsandstackingfaultribbonsinsilicon |