THE ELECTRICAL BEHAVIOR OF INDIVIDUAL DISLOCATIONS, SHOCKLEY PARTIALS AND STACKING-FAULT RIBBONS IN SILICON
The EBIC mode of the SEM has been used to study the electronic properties of individual dislocations in silicon at high spatial resolution. A theory of EBIC, relating the contrast to the fundamental defect parameters, such as the carrier lifetime in the vicinity of the defect, is presented. A means...
| Hlavní autoři: | , , |
|---|---|
| Médium: | Journal article |
| Jazyk: | English |
| Vydáno: |
1983
|