Origins of Spectral Diffusion in the Micro-Photoluminescence of Single InGaN Quantum Dots
We report on optical characterization of self-assembled InGaN quantum dots (QDs) grown on three GaN pseudo-substrates with differing threading dislocation densities. QD density is estimated via microphotoluminscence on a masked sample patterned with circular apertures, and appears to increase with d...
Main Authors: | Reid, B, Zhu, T, Puchtler, T, Fletcher, L, Chan, C, Oliver, R, Taylor, R |
---|---|
Format: | Journal article |
Language: | English |
Published: |
2013
|
Similar Items
-
Temporal variation in photoluminescence from single InGaN quantum dots
by: Rice, J, et al.
Published: (2004) -
Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
by: Park, Y, et al.
Published: (2018) -
Temperature-dependent fine structure splitting in InGaN quantum dots
by: Wang, T, et al.
Published: (2017) -
Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots
by: Rice, J, et al.
Published: (2004) -
Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots
by: Robinson, J, et al.
Published: (2004)