Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process.
We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of <111> segments were formed by employing a reactant gas purging...
| Main Authors: | , , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2012
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| _version_ | 1797090836462174208 |
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| author | Kim, J Moon, SR Kim, Y Chen, Z Zou, J Choi, D Joyce, H Gao, Q Tan, H Jagadish, C |
| author_facet | Kim, J Moon, SR Kim, Y Chen, Z Zou, J Choi, D Joyce, H Gao, Q Tan, H Jagadish, C |
| author_sort | Kim, J |
| collection | OXFORD |
| description | We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of <111> segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated. |
| first_indexed | 2024-03-07T03:24:28Z |
| format | Journal article |
| id | oxford-uuid:b88eb27a-2f5e-4df9-a2e8-6030b198280c |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T03:24:28Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | oxford-uuid:b88eb27a-2f5e-4df9-a2e8-6030b198280c2022-03-27T04:56:53ZTaper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:b88eb27a-2f5e-4df9-a2e8-6030b198280cEnglishSymplectic Elements at Oxford2012Kim, JMoon, SRKim, YChen, ZZou, JChoi, DJoyce, HGao, QTan, HJagadish, CWe investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of <111> segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated. |
| spellingShingle | Kim, J Moon, SR Kim, Y Chen, Z Zou, J Choi, D Joyce, H Gao, Q Tan, H Jagadish, C Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process. |
| title | Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process. |
| title_full | Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process. |
| title_fullStr | Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process. |
| title_full_unstemmed | Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process. |
| title_short | Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process. |
| title_sort | taper free and kinked germanium nanowires grown on silicon via purging and the two temperature process |
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