Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process.
We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of <111> segments were formed by employing a reactant gas purging...
Autors principals: | Kim, J, Moon, SR, Kim, Y, Chen, Z, Zou, J, Choi, D, Joyce, H, Gao, Q, Tan, H, Jagadish, C |
---|---|
Format: | Journal article |
Idioma: | English |
Publicat: |
2012
|
Ítems similars
-
Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process
per: Kim, J, et al.
Publicat: (2012) -
Taper-Free and Vertically Oriented Ge Nanowires on Ge/Si Substrates Grown by a Two-Temperature Process
per: Kim, J, et al.
Publicat: (2012) -
Vertically oriented epitaxial germanium nanowires on silicon substrates using thin germanium buffer layers
per: Jung, J, et al.
Publicat: (2010) -
Understanding the kink formation in GaAs/InAs heterostructural nanowires
per: Paladugu, M, et al.
Publicat: (2006) -
Structural and optical properties of III-V nanowires and nanowire heterostructures grown by metalorganic chemical vapour deposition
per: Joyce, H, et al.
Publicat: (2007)