Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process.
We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of <111> segments were formed by employing a reactant gas purging...
Κύριοι συγγραφείς: | Kim, J, Moon, SR, Kim, Y, Chen, Z, Zou, J, Choi, D, Joyce, H, Gao, Q, Tan, H, Jagadish, C |
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Μορφή: | Journal article |
Γλώσσα: | English |
Έκδοση: |
2012
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Παρόμοια τεκμήρια
Παρόμοια τεκμήρια
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Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process
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