Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process.

We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of <111> segments were formed by employing a reactant gas purging...

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Những tác giả chính: Kim, J, Moon, SR, Kim, Y, Chen, Z, Zou, J, Choi, D, Joyce, H, Gao, Q, Tan, H, Jagadish, C
Định dạng: Journal article
Ngôn ngữ:English
Được phát hành: 2012