Quantum interference in silicon one-dimensional junctionless nanowire field-effect transistors

Quantum interference in silicon one-dimensional junctionless nanowire field-effect transistors

We investigate the low-temperature transport in 8-nm-diam Si junctionless nanowire field-effect transistors fabricated by top down techniques with a wraparound gate and two different phosphorus doping concentrations. First we extract the intrinsic gate capacitance of the device geometry from a devic...

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Dades bibliogràfiques
Autors principals:	Schupp, F, Mirza, M, Maclaren, D, Briggs, G, Paul, D, Mol, J
Format:	Journal article
Idioma:	English
Publicat:	American Physical Society 2018

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