Quantum interference in silicon one-dimensional junctionless nanowire field-effect transistors
We investigate the low-temperature transport in 8-nm-diam Si junctionless nanowire field-effect transistors fabricated by top down techniques with a wraparound gate and two different phosphorus doping concentrations. First we extract the intrinsic gate capacitance of the device geometry from a devic...
| Autors principals: | , , , , , |
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| Format: | Journal article |
| Idioma: | English |
| Publicat: |
American Physical Society
2018
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