A New Topological Insulator Built From Quasi One-Dimensional Atomic Ribbons

A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one-dimensional, conducting atomic chains instead of the layered, two-dimensional sheets known from the established Bi2(Se,Te)3 system. The Sb-doped Bi2Se3 nanowires are grown in a TiO2-ca...

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Үндсэн зохиолчид: Scho nherr, P, Zhang, S, Liu, Y, Kusch, P, Reich, S, Giles, T, Daisenberger, D, Prabhakaran, D, Chen, Y, Hesjedal, T
Формат: Journal article
Хэвлэсэн: Wiley 2015
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author Scho nherr, P
Zhang, S
Liu, Y
Kusch, P
Reich, S
Giles, T
Daisenberger, D
Prabhakaran, D
Chen, Y
Hesjedal, T
author_facet Scho nherr, P
Zhang, S
Liu, Y
Kusch, P
Reich, S
Giles, T
Daisenberger, D
Prabhakaran, D
Chen, Y
Hesjedal, T
author_sort Scho nherr, P
collection OXFORD
description A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one-dimensional, conducting atomic chains instead of the layered, two-dimensional sheets known from the established Bi2(Se,Te)3 system. The Sb-doped Bi2Se3 nanowires are grown in a TiO2-catalyzed process by chemical vapor deposition. The binary Bi2Se3 is transformed from rhombohedral to orthorhombic by substituting Sb on ~38% of the Bi sites. Pure Sb2Se3 is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle-resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap.
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spelling oxford-uuid:ba8ddcf3-ce46-40ef-a027-244ee1f497842022-03-27T05:10:45ZA New Topological Insulator Built From Quasi One-Dimensional Atomic RibbonsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:ba8ddcf3-ce46-40ef-a027-244ee1f49784Symplectic Elements at OxfordWiley2015Scho nherr, PZhang, SLiu, YKusch, PReich, SGiles, TDaisenberger, DPrabhakaran, DChen, YHesjedal, TA novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one-dimensional, conducting atomic chains instead of the layered, two-dimensional sheets known from the established Bi2(Se,Te)3 system. The Sb-doped Bi2Se3 nanowires are grown in a TiO2-catalyzed process by chemical vapor deposition. The binary Bi2Se3 is transformed from rhombohedral to orthorhombic by substituting Sb on ~38% of the Bi sites. Pure Sb2Se3 is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle-resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap.
spellingShingle Scho nherr, P
Zhang, S
Liu, Y
Kusch, P
Reich, S
Giles, T
Daisenberger, D
Prabhakaran, D
Chen, Y
Hesjedal, T
A New Topological Insulator Built From Quasi One-Dimensional Atomic Ribbons
title A New Topological Insulator Built From Quasi One-Dimensional Atomic Ribbons
title_full A New Topological Insulator Built From Quasi One-Dimensional Atomic Ribbons
title_fullStr A New Topological Insulator Built From Quasi One-Dimensional Atomic Ribbons
title_full_unstemmed A New Topological Insulator Built From Quasi One-Dimensional Atomic Ribbons
title_short A New Topological Insulator Built From Quasi One-Dimensional Atomic Ribbons
title_sort new topological insulator built from quasi one dimensional atomic ribbons
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