PREPARATION AND CHARACTERIZATION OF TL2BA2CACU2O8 THIN-FILMS BY LASER ABLATION AND THALLIUM DIFFUSION
We report here the growth of Tl2Ba2CaCu 2O8 thin films by a combination of laser ablation and thallium diffusion on [001] MgO substrates. We find that the process configuration and sintering temperatures for thallium diffusion are of paramount importance in achieving single phase thin films. From x-...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Language: | English |
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1992
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| _version_ | 1826293502986682368 |
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| author | Liu, R Shih, W Scott, K Edwards, P Phillips, W Greer, A |
| author_facet | Liu, R Shih, W Scott, K Edwards, P Phillips, W Greer, A |
| author_sort | Liu, R |
| collection | OXFORD |
| description | We report here the growth of Tl2Ba2CaCu 2O8 thin films by a combination of laser ablation and thallium diffusion on [001] MgO substrates. We find that the process configuration and sintering temperatures for thallium diffusion are of paramount importance in achieving single phase thin films. From x-ray diffraction analysis, the films have a highly preferred orientation with the c crystal axis perpendicular to the surface of the substrate. A typical film has a T c(onset) = 120 K, Tc(midpoint) = 115 K, and T c(zero) = 109 K. The critical current density for a film, estimated from hysteresis loop and the Bean Model, is greater than 105 A/cm2 at 5 K in zero applied field. |
| first_indexed | 2024-03-07T03:31:06Z |
| format | Journal article |
| id | oxford-uuid:babf076e-e326-4e60-b448-f3b6c75b2a8d |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T03:31:06Z |
| publishDate | 1992 |
| record_format | dspace |
| spelling | oxford-uuid:babf076e-e326-4e60-b448-f3b6c75b2a8d2022-03-27T05:12:00ZPREPARATION AND CHARACTERIZATION OF TL2BA2CACU2O8 THIN-FILMS BY LASER ABLATION AND THALLIUM DIFFUSIONJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:babf076e-e326-4e60-b448-f3b6c75b2a8dEnglishSymplectic Elements at Oxford1992Liu, RShih, WScott, KEdwards, PPhillips, WGreer, AWe report here the growth of Tl2Ba2CaCu 2O8 thin films by a combination of laser ablation and thallium diffusion on [001] MgO substrates. We find that the process configuration and sintering temperatures for thallium diffusion are of paramount importance in achieving single phase thin films. From x-ray diffraction analysis, the films have a highly preferred orientation with the c crystal axis perpendicular to the surface of the substrate. A typical film has a T c(onset) = 120 K, Tc(midpoint) = 115 K, and T c(zero) = 109 K. The critical current density for a film, estimated from hysteresis loop and the Bean Model, is greater than 105 A/cm2 at 5 K in zero applied field. |
| spellingShingle | Liu, R Shih, W Scott, K Edwards, P Phillips, W Greer, A PREPARATION AND CHARACTERIZATION OF TL2BA2CACU2O8 THIN-FILMS BY LASER ABLATION AND THALLIUM DIFFUSION |
| title | PREPARATION AND CHARACTERIZATION OF TL2BA2CACU2O8 THIN-FILMS BY LASER ABLATION AND THALLIUM DIFFUSION |
| title_full | PREPARATION AND CHARACTERIZATION OF TL2BA2CACU2O8 THIN-FILMS BY LASER ABLATION AND THALLIUM DIFFUSION |
| title_fullStr | PREPARATION AND CHARACTERIZATION OF TL2BA2CACU2O8 THIN-FILMS BY LASER ABLATION AND THALLIUM DIFFUSION |
| title_full_unstemmed | PREPARATION AND CHARACTERIZATION OF TL2BA2CACU2O8 THIN-FILMS BY LASER ABLATION AND THALLIUM DIFFUSION |
| title_short | PREPARATION AND CHARACTERIZATION OF TL2BA2CACU2O8 THIN-FILMS BY LASER ABLATION AND THALLIUM DIFFUSION |
| title_sort | preparation and characterization of tl2ba2cacu2o8 thin films by laser ablation and thallium diffusion |
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