Boron diffusion in nanocrystalline 3C-SiC
The diffusion of boron in nanocrystalline silicon carbide (nc-SiC) films with a grain size of 4-7 nm is studied using a poly-Si boron source. Diffusion is found to be much faster than in monocrystalline SiC as it takes place within the grain boundary (GB) network. Drive-in temperatures of 900-1000 °...
| Main Authors: | , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
American Institute of Physics Inc.
2014
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| _version_ | 1826293521902993408 |
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| author | Schnabel, M Weiss, C Canino, M Rachow, T Loeper, P Summonte, C Mirabella, S Janz, S Wilshaw, P |
| author_facet | Schnabel, M Weiss, C Canino, M Rachow, T Loeper, P Summonte, C Mirabella, S Janz, S Wilshaw, P |
| author_sort | Schnabel, M |
| collection | OXFORD |
| description | The diffusion of boron in nanocrystalline silicon carbide (nc-SiC) films with a grain size of 4-7 nm is studied using a poly-Si boron source. Diffusion is found to be much faster than in monocrystalline SiC as it takes place within the grain boundary (GB) network. Drive-in temperatures of 900-1000 °C are suitable for creating shallow boron profiles up to 100 nm deep, while 1100 °C is sufficient to flood the 200 nm thick films with boron. From the resulting plateau at 1100 °C a boron segregation coefficient of 28 between nc-SiC and the Si substrate, as well as a GB boron solubility limit of 0.2 nm-2 is determined. GB diffusion in the bulk of the films is Fickian and thermally activated with DGB(T)=(3.1-5.6)×107exp(-5.03±0.16- eV/kBT) cm2s-1. The activation energy is interpreted in terms of a trapping mechanism at dangling bonds. Higher boron concentrations are present at the nc-SiC surface and are attributed to immobilized boron. © 2014 AIP Publishing LLC. |
| first_indexed | 2024-03-07T03:31:24Z |
| format | Journal article |
| id | oxford-uuid:bad98bcc-e2bc-41e9-b400-611f1ebaa0aa |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T03:31:24Z |
| publishDate | 2014 |
| publisher | American Institute of Physics Inc. |
| record_format | dspace |
| spelling | oxford-uuid:bad98bcc-e2bc-41e9-b400-611f1ebaa0aa2022-03-27T05:12:43ZBoron diffusion in nanocrystalline 3C-SiCJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:bad98bcc-e2bc-41e9-b400-611f1ebaa0aaEnglishSymplectic Elements at OxfordAmerican Institute of Physics Inc.2014Schnabel, MWeiss, CCanino, MRachow, TLoeper, PSummonte, CMirabella, SJanz, SWilshaw, PThe diffusion of boron in nanocrystalline silicon carbide (nc-SiC) films with a grain size of 4-7 nm is studied using a poly-Si boron source. Diffusion is found to be much faster than in monocrystalline SiC as it takes place within the grain boundary (GB) network. Drive-in temperatures of 900-1000 °C are suitable for creating shallow boron profiles up to 100 nm deep, while 1100 °C is sufficient to flood the 200 nm thick films with boron. From the resulting plateau at 1100 °C a boron segregation coefficient of 28 between nc-SiC and the Si substrate, as well as a GB boron solubility limit of 0.2 nm-2 is determined. GB diffusion in the bulk of the films is Fickian and thermally activated with DGB(T)=(3.1-5.6)×107exp(-5.03±0.16- eV/kBT) cm2s-1. The activation energy is interpreted in terms of a trapping mechanism at dangling bonds. Higher boron concentrations are present at the nc-SiC surface and are attributed to immobilized boron. © 2014 AIP Publishing LLC. |
| spellingShingle | Schnabel, M Weiss, C Canino, M Rachow, T Loeper, P Summonte, C Mirabella, S Janz, S Wilshaw, P Boron diffusion in nanocrystalline 3C-SiC |
| title | Boron diffusion in nanocrystalline 3C-SiC |
| title_full | Boron diffusion in nanocrystalline 3C-SiC |
| title_fullStr | Boron diffusion in nanocrystalline 3C-SiC |
| title_full_unstemmed | Boron diffusion in nanocrystalline 3C-SiC |
| title_short | Boron diffusion in nanocrystalline 3C-SiC |
| title_sort | boron diffusion in nanocrystalline 3c sic |
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