Boron diffusion in nanocrystalline 3C-SiC

Boron diffusion in nanocrystalline 3C-SiC

The diffusion of boron in nanocrystalline silicon carbide (nc-SiC) films with a grain size of 4-7 nm is studied using a poly-Si boron source. Diffusion is found to be much faster than in monocrystalline SiC as it takes place within the grain boundary (GB) network. Drive-in temperatures of 900-1000 °...

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Bibliographic Details
Main Authors:	Schnabel, M, Weiss, C, Canino, M, Rachow, T, Loeper, P, Summonte, C, Mirabella, S, Janz, S, Wilshaw, P
Format:	Journal article
Language:	English
Published:	American Institute of Physics Inc. 2014

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