Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
Structural and optical properties of In x Ga 1-x N/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InG...
| Main Authors: | , , , , , , , |
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| Format: | Journal article |
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Elsevier
2018
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| _version_ | 1797091356697427968 |
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| author | Park, Y Chan, C Taylor, R Kim, N Jo, Y Lee, S Yang, W Im, H |
| author_facet | Park, Y Chan, C Taylor, R Kim, N Jo, Y Lee, S Yang, W Im, H |
| author_sort | Park, Y |
| collection | OXFORD |
| description | Structural and optical properties of In x Ga 1-x N/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities. |
| first_indexed | 2024-03-07T03:31:50Z |
| format | Journal article |
| id | oxford-uuid:bafdd54b-11d5-4711-81fd-478166ef73cd |
| institution | University of Oxford |
| last_indexed | 2024-03-07T03:31:50Z |
| publishDate | 2018 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | oxford-uuid:bafdd54b-11d5-4711-81fd-478166ef73cd2022-03-27T05:13:40ZCarrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorodsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:bafdd54b-11d5-4711-81fd-478166ef73cdSymplectic Elements at OxfordElsevier2018Park, YChan, CTaylor, RKim, NJo, YLee, SYang, WIm, HStructural and optical properties of In x Ga 1-x N/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities. |
| spellingShingle | Park, Y Chan, C Taylor, R Kim, N Jo, Y Lee, S Yang, W Im, H Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods |
| title | Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods |
| title_full | Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods |
| title_fullStr | Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods |
| title_full_unstemmed | Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods |
| title_short | Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods |
| title_sort | carrier confinement effects of inxga1 xn gan multi quantum disks with gan surface barriers grown in gan nanorods |
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