Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
Structural and optical properties of In x Ga 1-x N/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InG...
| Main Authors: | , , , , , , , |
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| Format: | Journal article |
| Published: |
Elsevier
2018
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