Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods

Structural and optical properties of In x Ga 1-x N/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InG...

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Bibliographic Details
Main Authors:	Park, Y, Chan, C, Taylor, R, Kim, N, Jo, Y, Lee, S, Yang, W, Im, H
Format:	Journal article
Published:	Elsevier 2018

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