HOT-CARRIER PHOTOLUMINESCENCE FROM GAAS V-GROOVE QUANTUM WIRES

We report measurements of hot-carrier photoluminescence from GaAs V-groove quantum wires, cw spectra reveal distinct one-dimensional subbands: at low excitation density recombination from laterally confined ny=1 states is dominant which shows that carriers relax efficiently to the lowest subband ny=...

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Bibliographic Details
Main Authors: Maciel, A, Ryan, J, Rinaldi, R, Cingolani, R, Ferrara, M, Marti, U, Martin, D, Moriergemoud, F, Reinhart, F
Format: Conference item
Published: 1994
Description
Summary:We report measurements of hot-carrier photoluminescence from GaAs V-groove quantum wires, cw spectra reveal distinct one-dimensional subbands: at low excitation density recombination from laterally confined ny=1 states is dominant which shows that carriers relax efficiently to the lowest subband ny=2 and 3 recombination becomes pronounced at higher temperatures and density, which indicates inhibited relaxation, possibly due to band filling. Time-resolved photoluminescence measurements at 10 K show a rise time of nearly 100 ps, which is due to energy relaxation. At later times the intensity of the ny=1 line shows a monotonic decay at low carrier density, but there is a pronounced plateau at high density that extends for nearly 200 ps. These results provide clear evidence of carrier relaxation and band filling in quantum wires.