Measurement of small misorientations using electron back scatter diffraction
This paper concerns the determination of small misorientations using electron back scatter diffraction (EBSD). Generally EBSD is used to measure crystal orientations from which misorientations can be calculated. Repeated measurements on undeformed Si showed that the calculated misorientations have a...
Հիմնական հեղինակ: | Wilkinson, A |
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Ձևաչափ: | Conference item |
Հրապարակվել է: |
1999
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Նմանատիպ նյութեր
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