Investigation of InGaAsP-based solar cells for double-junction photovoltaic devices
This paper deals with the design, implementation and assessment of single-junction solar cells using the quaternary semiconductor material InGaAsP. Two bandgaps of 1.0 and 1.2eV were considered in n/p and p/n structure configurations lattice-matched to InP. These solar cells are being investigated f...
| Main Authors: | , , , |
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| 格式: | Conference item |
| 出版: |
2008
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