Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation
An experimental study of the microstructure during formation and evolution of MOCVD-grown In0.6Ga0.4As/GaAs quantum dots (QDs) was undertaken to provide a more thorough understanding of the underlying growth principles. Transmission Electron Microscopy (TEM) was used to examine the evolution of the...
| Päätekijät: | , , , , , |
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| Aineistotyyppi: | Conference item |
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1999
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| _version_ | 1826293659185709056 |
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| author | Wellman, J George, T Leon, R Fafard, S Zou, J Cockayne, D |
| author_facet | Wellman, J George, T Leon, R Fafard, S Zou, J Cockayne, D |
| author_sort | Wellman, J |
| collection | OXFORD |
| description | An experimental study of the microstructure during formation and evolution of MOCVD-grown In0.6Ga0.4As/GaAs quantum dots (QDs) was undertaken to provide a more thorough understanding of the underlying growth principles. Transmission Electron Microscopy (TEM) was used to examine the evolution of the In0.6Ga0.4As/GaAs system in order to correlate photoluminescence (PL) spectra with structural data. In particular, we have examined the QD size evolution, capped and uncapped, and its possible contribution to the slight QD PL blueshift observed before QD saturation. TEM studies in the QD coalescence regime clarify the microstructural origins of the sharp decrease in QD PL due to large, incoherent islands observed in AFM and TEM images. |
| first_indexed | 2024-03-07T03:33:33Z |
| format | Conference item |
| id | oxford-uuid:bb86adfb-8a24-496d-b8fa-ed61ce123764 |
| institution | University of Oxford |
| last_indexed | 2024-03-07T03:33:33Z |
| publishDate | 1999 |
| record_format | dspace |
| spelling | oxford-uuid:bb86adfb-8a24-496d-b8fa-ed61ce1237642022-03-27T05:17:37ZTransmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformationConference itemhttp://purl.org/coar/resource_type/c_5794uuid:bb86adfb-8a24-496d-b8fa-ed61ce123764Symplectic Elements at Oxford1999Wellman, JGeorge, TLeon, RFafard, SZou, JCockayne, DAn experimental study of the microstructure during formation and evolution of MOCVD-grown In0.6Ga0.4As/GaAs quantum dots (QDs) was undertaken to provide a more thorough understanding of the underlying growth principles. Transmission Electron Microscopy (TEM) was used to examine the evolution of the In0.6Ga0.4As/GaAs system in order to correlate photoluminescence (PL) spectra with structural data. In particular, we have examined the QD size evolution, capped and uncapped, and its possible contribution to the slight QD PL blueshift observed before QD saturation. TEM studies in the QD coalescence regime clarify the microstructural origins of the sharp decrease in QD PL due to large, incoherent islands observed in AFM and TEM images. |
| spellingShingle | Wellman, J George, T Leon, R Fafard, S Zou, J Cockayne, D Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation |
| title | Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation |
| title_full | Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation |
| title_fullStr | Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation |
| title_full_unstemmed | Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation |
| title_short | Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation |
| title_sort | transmission electron microscopy study of ingaas gaas structural evolution near the stranski krastanow transformation |
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