Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation

Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation

An experimental study of the microstructure during formation and evolution of MOCVD-grown In0.6Ga0.4As/GaAs quantum dots (QDs) was undertaken to provide a more thorough understanding of the underlying growth principles. Transmission Electron Microscopy (TEM) was used to examine the evolution of the...

Deskribapen osoa

Xehetasun bibliografikoak
Egile Nagusiak:	Wellman, J, George, T, Leon, R, Fafard, S, Zou, J, Cockayne, D
Formatua:	Conference item
Argitaratua:	1999

Antzeko izenburuak

Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
nork: Lobo, C, et al.
Argitaratua: (2000)

Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
nork: Leon, R, et al.
Argitaratua: (2000)

Surface morphology studies of single and double layer In0.5Ga0.5As/GaAs Quantum dots grown by stranski krastanow growth modes /
nork: Didik Aryanto, 1983- author, et al.
Argitaratua: (2009)

Surface morphology studies of single and double layer In0.5Ga0.5As/GaAs quantum dots grown by stranski-krastanow growth modes
nork: Aryanto, Didik, et al.
Argitaratua: (2009)

Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots
nork: Leon, R, et al.
Argitaratua: (1999)

Oval defects in InGaAs/GaAs heterostructures
nork: Russell-Harriott, J, et al.
Argitaratua: (1998)

Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
nork: Leon, R, et al.
Argitaratua: (1996)

Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
nork: Russell, J, et al.
Argitaratua: (2000)

Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
nork: RussellHarriott, J, et al.
Argitaratua: (1996)

Stable and metastable InGaAs/GaAs island shapes and surfactantlike suppression of the wetting transformation
nork: Leon, R, et al.
Argitaratua: (1998)

On-zone axis electron diffraction contrast study of the size of InGaAs/GaAs quantum dots
nork: Liao, X, et al.
Argitaratua: (1998)

Structural evolution and the role of dislocations in InGaAs island formation on GaAs (110) and (111)B surfaces
nork: Lobo, C, et al.
Argitaratua: (1998)

Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots
nork: Raja S. R. Gajjela, et al.
Argitaratua: (2021-06-01)

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
nork: Zou, J, et al.
Argitaratua: (1999)

Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots
nork: Gajjela, RSR, et al.
Argitaratua: (2021)

Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots
nork: Liao, X, et al.
Argitaratua: (1998)

Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
nork: Russell-Harriott, J, et al.
Argitaratua: (1998)

Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
nork: Zou, J, et al.
Argitaratua: (1997)

On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTs
nork: K. F. Yarn, et al.
Argitaratua: (2002-01-01)

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
nork: Wang Zhiming, et al.
Argitaratua: (2010-01-01)

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
nork: Joyce, H, et al.
Argitaratua: (2011)

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
nork: Joyce, H, et al.
Argitaratua: (2011)

Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
nork: Brehm Moritz, et al.
Argitaratua: (2011-01-01)

Improved carrier collection in intermixed InGaAs/GaAs quantum wells
nork: Dao, L, et al.
Argitaratua: (1998)

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
nork: S.A. Iliash
Argitaratua: (2016-04-01)

Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
nork: Li, Chaoyong.
Argitaratua: (2009)

A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
nork: Ming Rong Lee, et al.
Argitaratua: (2001-01-01)

Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
nork: Tyan, S, et al.
Argitaratua: (2000)

InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
nork: Tyan, S, et al.
Argitaratua: (2001)

The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC
nork: Sayeda Anika Amin, et al.
Argitaratua: (2017-01-01)

Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
nork: A. A. Maldzhy, et al.
Argitaratua: (2006-12-01)

Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures
nork: Joyce, H, et al.
Argitaratua: (2007)

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application
nork: Campesato Roberta, et al.
Argitaratua: (2017-01-01)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
nork: M.M. Vinoslavskii, et al.
Argitaratua: (2018-10-01)

DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors
nork: H. C. Chen
Argitaratua: (1998-01-01)

Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers
nork: Mikhail V. Maximov, et al.
Argitaratua: (2023-09-01)

Methods used to develop the light emitting nanostructures with InGaAs/GaAs quantum wells
nork: S. Saeid
Argitaratua: (2017-01-01)

Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well
nork: M. Souaf, et al.
Argitaratua: (2015-09-01)

Study of quantum phenomena in intermixed GaAs/AlGaAs and InGaAs/InGaAsP quantum well structures
nork: Au Yeung, Tin Cheung.
Argitaratua: (2008)

Espesores críticos de relajación en pozos cuánticos de InGaAs/ GaAs sobre sustratos de GaAs (001) y (111)B
nork: Gutiérrez, M., et al.
Argitaratua: (2000-08-01)