Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation

Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation

An experimental study of the microstructure during formation and evolution of MOCVD-grown In0.6Ga0.4As/GaAs quantum dots (QDs) was undertaken to provide a more thorough understanding of the underlying growth principles. Transmission Electron Microscopy (TEM) was used to examine the evolution of the...

書誌詳細
主要な著者:	Wellman, J, George, T, Leon, R, Fafard, S, Zou, J, Cockayne, D
フォーマット:	Conference item
出版事項:	1999

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