Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation

Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation

An experimental study of the microstructure during formation and evolution of MOCVD-grown In0.6Ga0.4As/GaAs quantum dots (QDs) was undertaken to provide a more thorough understanding of the underlying growth principles. Transmission Electron Microscopy (TEM) was used to examine the evolution of the...

Бүрэн тодорхойлолт

Номзүйн дэлгэрэнгүй
Үндсэн зохиолчид:	Wellman, J, George, T, Leon, R, Fafard, S, Zou, J, Cockayne, D
Формат:	Conference item
Хэвлэсэн:	1999

Ижил төстэй зүйлс

Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
-н: Lobo, C, зэрэг
Хэвлэсэн: (2000)

Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
-н: Leon, R, зэрэг
Хэвлэсэн: (2000)

Surface morphology studies of single and double layer In0.5Ga0.5As/GaAs Quantum dots grown by stranski krastanow growth modes /
-н: Didik Aryanto, 1983- author, зэрэг
Хэвлэсэн: (2009)

Surface morphology studies of single and double layer In0.5Ga0.5As/GaAs quantum dots grown by stranski-krastanow growth modes
-н: Aryanto, Didik, зэрэг
Хэвлэсэн: (2009)

Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots
-н: Leon, R, зэрэг
Хэвлэсэн: (1999)

Oval defects in InGaAs/GaAs heterostructures
-н: Russell-Harriott, J, зэрэг
Хэвлэсэн: (1998)

Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
-н: Leon, R, зэрэг
Хэвлэсэн: (1996)

Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
-н: Russell, J, зэрэг
Хэвлэсэн: (2000)

Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
-н: RussellHarriott, J, зэрэг
Хэвлэсэн: (1996)

Stable and metastable InGaAs/GaAs island shapes and surfactantlike suppression of the wetting transformation
-н: Leon, R, зэрэг
Хэвлэсэн: (1998)

On-zone axis electron diffraction contrast study of the size of InGaAs/GaAs quantum dots
-н: Liao, X, зэрэг
Хэвлэсэн: (1998)

Structural evolution and the role of dislocations in InGaAs island formation on GaAs (110) and (111)B surfaces
-н: Lobo, C, зэрэг
Хэвлэсэн: (1998)

Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots
-н: Raja S. R. Gajjela, зэрэг
Хэвлэсэн: (2021-06-01)

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
-н: Zou, J, зэрэг
Хэвлэсэн: (1999)

Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots
-н: Gajjela, RSR, зэрэг
Хэвлэсэн: (2021)

Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots
-н: Liao, X, зэрэг
Хэвлэсэн: (1998)

Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
-н: Russell-Harriott, J, зэрэг
Хэвлэсэн: (1998)

Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
-н: Zou, J, зэрэг
Хэвлэсэн: (1997)

On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTs
-н: K. F. Yarn, зэрэг
Хэвлэсэн: (2002-01-01)

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
-н: Wang Zhiming, зэрэг
Хэвлэсэн: (2010-01-01)

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
-н: Joyce, H, зэрэг
Хэвлэсэн: (2011)

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
-н: Joyce, H, зэрэг
Хэвлэсэн: (2011)

Ultra-steep side facets in multi-faceted SiGe/Si(001) Stranski-Krastanow islands
-н: Brehm Moritz, зэрэг
Хэвлэсэн: (2011-01-01)

Improved carrier collection in intermixed InGaAs/GaAs quantum wells
-н: Dao, L, зэрэг
Хэвлэсэн: (1998)

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
-н: S.A. Iliash
Хэвлэсэн: (2016-04-01)

Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
-н: Li, Chaoyong.
Хэвлэсэн: (2009)

A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
-н: Ming Rong Lee, зэрэг
Хэвлэсэн: (2001-01-01)

Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
-н: Tyan, S, зэрэг
Хэвлэсэн: (2000)

InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
-н: Tyan, S, зэрэг
Хэвлэсэн: (2001)

The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC
-н: Sayeda Anika Amin, зэрэг
Хэвлэсэн: (2017-01-01)

Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
-н: A. A. Maldzhy, зэрэг
Хэвлэсэн: (2006-12-01)

Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures
-н: Joyce, H, зэрэг
Хэвлэсэн: (2007)

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application
-н: Campesato Roberta, зэрэг
Хэвлэсэн: (2017-01-01)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
-н: M.M. Vinoslavskii, зэрэг
Хэвлэсэн: (2018-10-01)

DC and AC Characteristics of GaAs/InGaAs/AIGaAS Real Space Transfer Transistors
-н: H. C. Chen
Хэвлэсэн: (1998-01-01)

Superluminescent Diodes Based on Chirped InGaAs/GaAs Quantum Well-Dot Layers
-н: Mikhail V. Maximov, зэрэг
Хэвлэсэн: (2023-09-01)

Methods used to develop the light emitting nanostructures with InGaAs/GaAs quantum wells
-н: S. Saeid
Хэвлэсэн: (2017-01-01)

Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well
-н: M. Souaf, зэрэг
Хэвлэсэн: (2015-09-01)

Study of quantum phenomena in intermixed GaAs/AlGaAs and InGaAs/InGaAsP quantum well structures
-н: Au Yeung, Tin Cheung.
Хэвлэсэн: (2008)

Espesores críticos de relajación en pozos cuánticos de InGaAs/ GaAs sobre sustratos de GaAs (001) y (111)B
-н: Gutiérrez, M., зэрэг
Хэвлэсэн: (2000-08-01)