Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation
An experimental study of the microstructure during formation and evolution of MOCVD-grown In0.6Ga0.4As/GaAs quantum dots (QDs) was undertaken to provide a more thorough understanding of the underlying growth principles. Transmission Electron Microscopy (TEM) was used to examine the evolution of the...
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| Aineistotyyppi: | Conference item |
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1999
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