Davies, G., Skevington, P., Foord, J., French, C., & Levoguer, C. (1994). SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS.
Цитирование в стиле Чикаго (17-е изд.)Davies, G., P. Skevington, J. Foord, C. French, и C. Levoguer. SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS. 1994.
Цитирование MLA (9-е изд.)Davies, G., et al. SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS. 1994.
Предупреждение: эти цитированмия не могут быть всегда правильны на 100%.